IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
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High Performance Monolithically Integrated GaN Driving VMOSFET on LED
Vertically Stacked and Independently Controlled Twin ... - IEEE Xplore
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PDF) High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
Kan-Hao Xue Publication
High Resolution Fabrication of Josephson Microbridges
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PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211
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PDF) Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode
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IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the
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Terahertz Detector Utilizing Two-dimensional Electronic Fluid - IEEE Electron Device Letters
